The procedure for the synthesis of quasi-one-dimensional structures of 4d and 5d (Nb, Mo Ta, W)of transition metal
Predmet izuma je postopek za sintezo enodimenzionalnih struktur, to je nanožic, mikrožic in nanotrakov 4d in 5d prehodnih kovin (Nb, Mo Ta, W). Izum spada na področje anorganske kemije in kemije prehodnih kovin. Izum se nanaša na sintezo kvazi enodimenzionalnih struktur prehodnih kovin z metodo pret...
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Main Authors | , , |
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Format | Patent |
Language | English Slovenian |
Published |
31.07.2020
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Subjects | |
Online Access | Get full text |
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Summary: | Predmet izuma je postopek za sintezo enodimenzionalnih struktur, to je nanožic, mikrožic in nanotrakov 4d in 5d prehodnih kovin (Nb, Mo Ta, W). Izum spada na področje anorganske kemije in kemije prehodnih kovin. Izum se nanaša na sintezo kvazi enodimenzionalnih struktur prehodnih kovin z metodo pretvorbe kvazi enodimenzionalnih spojin s podmikronskim prerezom nanožic opisanih s formulo M6CyHz, (8,2 manjše kot y+z manjše ali je enako kot 0), kjer je M prehodna kovina (Nb, Mo Ta, W), C je halkogen (žveplo (S), selen (Se), telur (Te)); H je halogen (jod (I)) s segrevanjem v prisotnosti vodika. Ta postopek omogoča sintezo kvazi enodimenzionalnih struktur, to je nanožic, mikrožic in nanotrakov 4d in 5d prehodnih kovin (Nb, Mo Ta, W).
The subject of the invention is a method for a synthesis of one-dimensional structures, such as nanowires, microwires and nanobelts of 4d and 5d transition metals (Nb, Mo Ta, W). The invention belongs to the field of inorganic chemistry and chemistry of transition metals. The invention refers to a synthesis of quasi one-dimensional structures of transition metals by using a method of conversion of quasi one-dimensional compounds with a submicron cross-section of nanowires described with formula M6CYHZ, 8,2<y+z =10, wherein M is a transition metal (Nb, Mo Ta, W), C is a chalcogen (sulphur i(S), selenium (Se), tellurium (Te)); H is halogen (iodine (I)) by heating in the presence of hydrogen. This method provides for a synthesis of quasi one-dimensional structures, such as nanowires, microwires and nanobelts of 4d and 5d transition metals (Nb, Mo Ta, W). |
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Bibliography: | Application Number: SI20110000223 |