DUAL SILICON-ON-INSULATOR DEVICE WAFER DIE

A silicon-on-insulator semiconductor device is provided in which a single wafer die contains a transistor over an insulator layer to form a fully depleted silicon-on-insulator device and a transistor formed in a semiconductor island over an insulator structure on the semiconductor wafer forms a part...

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Bibliographic Details
Main Authors RANDALL CHA CHER LIANG, GOH WANG LING, LIM YEOW KHENG, TAE JONG LEE, ALEX SEE
Format Patent
LanguageEnglish
Published 27.10.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silicon-on-insulator semiconductor device is provided in which a single wafer die contains a transistor over an insulator layer to form a fully depleted silicon-on-insulator device and a transistor formed in a semiconductor island over an insulator structure on the semiconductor wafer forms a partially depleted silicon-on-insulator device.
Bibliography:Application Number: SG20020000749