METHOD TO REMOVE COPPER CONTAMINATION BY USING DOWNSTREAM OXYGEN AND CHELATING AGENT PLASMA

A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxygen radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be...

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Bibliographic Details
Main Authors JOHN SUDIJONO, YAKUB ALIYU, MEI SHENG ZHOU, YI XU, SUBHASH GUPTA, PAUL HO, SUDIPTO RANENDRA ROY, SIMON CHOOI
Format Patent
LanguageEnglish
Published 19.11.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxygen radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxygen radical containing downstream plasma and vaporized chelating agent are mixed to form an oxygen radical containing downstream plasma / vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.
Bibliography:Application Number: SG20020001760