SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATION

SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATIONA method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing...

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Main Authors CHEBI, ROBERT P, WINNICZEK, JAROSLAW W
Format Patent
LanguageEnglish
Published 30.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATIONA method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.FIG. 1
AbstractList SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATIONA method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.FIG. 1
Author CHEBI, ROBERT P
WINNICZEK, JAROSLAW W
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Snippet SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATIONA method and apparatus for etching a silicon layer through a patterned mask formed thereon are...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATION
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