SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATION

SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATIONA method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing...

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Bibliographic Details
Main Authors CHEBI, ROBERT P, WINNICZEK, JAROSLAW W
Format Patent
LanguageEnglish
Published 30.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:SILICON ETCH WITH PASSIVATION USING PLASMA ENHANCED OXIDATIONA method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.FIG. 1
Bibliography:Application Number: SG20130079231