METHOD FOR PRODUCING A MULTIPLICITY OF SEMICONDUCTOR WAFERS BY PROCESSING A SINGLE CRYSTAL

• Main Authors: HANS OELKRUG, JOSEF SCHUSTER
• Format: Patent
• Language: English
• Published: 30.12.2013
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

15Method for producing a multiplicity of semiconductor wafers by processing a single crystalAbstractThe invention relates to a method for producing a multiplicity of semiconductor wafers by processing a single crystal, the central longitudinal axis of which has an orientation that deviates from a sought orientation of the crystal lattice of the semiconductor wafers. The method comprises slicing at least one block from a single crystal present in a grown state along cutting planes perpendicular to a crystallographic axis representing the sought orientation of the crystal lattice of the semiconductor wafers; grinding the lateral surface of the block around the crystallographic axis; and slicing a multiplicity of semiconductor wafers from the ground block along cutting planes perpendicular to the crystallographic axis.Fig. 2