CRYSTALLINE SILICON INGOT AND METHOD OF FABRICATING THE SAME

The present invention provides a crystalline silicon ingot and a fabricatingmethod thereof. The method of the invention utilizes a nucleation promotion layer to promote a plurality of silicon grains nucleating on the nucleation promotion layer from a silicon melt and growing in a vertical direction...

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Main Authors HSU, SUNG-LIN, LAN, WENIEH, HSU, WENING, PAI, KAI-YUAN, YU, WEN-HUAI, CHOU, HUNG-SHENG, YANG, YU-MIN, CHIANG, YU-TSUNG, YANG, CHENG-JUI, LAN, CHUNG-WEN
Format Patent
LanguageEnglish
Published 28.06.2013
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Summary:The present invention provides a crystalline silicon ingot and a fabricatingmethod thereof. The method of the invention utilizes a nucleation promotion layer to promote a plurality of silicon grains nucleating on the nucleation promotion layer from a silicon melt and growing in a vertical direction until entirety of the silicon melt is solidified to obtain the crystalline silicon ingot. Figure 9
Bibliography:Application Number: SG20120078762