HE TREATMENT TO IMPROVE LOW-K ADHESION PROPERTY
A method of improving adhesion of low dielectric constant films to other dielectric films is described. A low dielectric constant material layer is deposited on a substrate. The low dielectric constant material layer is treated with helium plasma. An overlying layer is deposited on the low dielectri...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
29.08.2005
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Subjects | |
Online Access | Get full text |
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Summary: | A method of improving adhesion of low dielectric constant films to other dielectric films is described. A low dielectric constant material layer is deposited on a substrate. The low dielectric constant material layer is treated with helium plasma. An overlying layer is deposited on the low dielectric constant material layer wherein there is good adhesion between the low dielectric constant material layer and the overlying layer. |
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Bibliography: | Application Number: SG20040007859 |