SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE
A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based ab...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English |
Published |
29.04.2021
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Subjects | |
Online Access | Get full text |
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Abstract | A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer. |
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AbstractList | A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer. |
Author | BULLER, Gerald S VINES, Peter MIRZA, Muhammad M MILLAR, Ross W DUMAS, Derek KIRDODA, Jaroslaw KUZMENKO, Kateryna PAUL, Douglas John |
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Snippet | A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE |
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