SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE

A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based ab...

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Bibliographic Details
Main Authors DUMAS, Derek, MIRZA, Muhammad M, KIRDODA, Jaroslaw, PAUL, Douglas John, MILLAR, Ross W, BULLER, Gerald S, VINES, Peter, KUZMENKO, Kateryna
Format Patent
LanguageEnglish
Published 29.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer.
Bibliography:Application Number: SG20211102339R