SEMICONDUCTOR PLUG PROTECTED BY PROTECTIVE DIELECTRIC LAYER IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME

Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substra...

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Bibliographic Details
Main Authors ZHANG, Fushan, WANG, EnBo, YANG, Haohao, XU, Qianbing, ZHANG, Ruo Fang, ZHANG, Yong
Format Patent
LanguageEnglish
Published 25.02.2021
Subjects
ELECTRICITY
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Summary:Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug in a lower portion of the memory string, a protective dielectric layer on the semiconductor plug, and a memory film above the protective dielectric layer and along a sidewall of the memory string.
Bibliography:Application Number: SG2021110824Q