SURFACE MODIFICATION CONTROL FOR ETCH METRIC ENHANCEMENT

• Main Authors: KOMATSU, Kenji, WATANABE, Seiichi, PUROHIT, Viswas, COPPA, Brian J
• Format: Patent
• Language: English
• Published: 30.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

STOPTHE SURFACE MODIFICATION PROCESS AT A DETERMINED ENDPOINT TIME BASED ON THE OPTICAL EMISSION SPECTRA z W O 20 18/ 17 00 10 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 20 September 2018 (20.09.2018) WIP0 I PCT iii11111111 111111111111111111111111111111111111111111111111111111111111111111111111111111111 (10) International Publication Number WO 2018/170010 Al (51) International Patent Classification: H01L 21/3065 (2006.01) HOlL 21/66 (2006.01) H01J 37/32 (2006.01) HOlL 21/67(2006.01) (21) International Application Number: PCT/US2018/022253 (22) International Filing Date: 13 March 2018 (13.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/473,193 17 March 2017 (17.03.2017) US (71) Applicant: TOKYO ELECTRON LIMITED [JP/JP]; Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325 (JP). (71) Applicant (for JP only): TOKYO ELECTRON U.S. HOLDINGS, INC. [US/US]; 2400 Grove Boulevard, Austin, Texas 78741 (US). (72) Inventors: COPPA, Brian J.; Suite 100, 9095 S. Federal Way, Boise, Idaho 83716 (US). PUROHIT, Viswas; Suite 100, 9095 S. Federal Way, Boise, Idaho 83716 (US). (74) Agent: MITROVIC, Andrej; Tokyo Electron U.S. Hold- ings, Inc., 2400 Grove Blvd., Austin, Texas 78741 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) (54) Title: SURFACE MODIFICATION CONTROL FOR ETCH METRIC ENHANCEMENT (57) : A method is disclosed for monitoring and controlling a process of ...r - 210 plasma-assisted surface modification of a layer formed on a substrate. The method includes flowing a surface modification gas into a plasma processing chamber of a 212 plasma processing system, igniting a plasma in the plasma processing chamber to 1 7 initiate a surface modification process for a layer formed on a substrate, and acquir- ing optical emission spectra from an optical emission spectroscopy system attached k 214 to the plasma processing chamber, during the surface modification process for the layer. For one embodiment, the method includes altering at least one parameter of the surface modification process based on the acquired optical emission spectra. For one embodiment, the acquired optical emission spectra can include an intensity of a spectral line, a slope of a spectral line, or both to enable endpoint control of the surface modification process. Additional methods and related systems are also dis- closed. ALTER AT LEAST ONE PARAMETER OF THE SURFACE MODIFICATION PROCESS BASED ON THE ACQUIRED OPTICAL EMISSION SPECTRA CHANGE E-BEAM RECIPE PARAMETER(S) BASED ON OES SPECTRAL DATA r z 222 ITERATE THE ACQUIRING OES, STOPPPING THE SURFACE MODIFICATION PROCESS, AND ALTERING THE AT LEAST ONE PARAMETER OF THE SURFACE MODIFICATION PROCESS UNTIL A PHYSICAL PROPERTY OR A GEOMETRICAL CHARACTERISTIC OR BOTH OF A PATTERN FORMED DURING A PLASMA ETCH OR DEPOSITION PROCESS SUBSEQUENT TO THE SURFACE MODIFICATION PROCESS MEET TARGET VALUES FIG. 2D FLOW A SURFACE MODIFICATION GAS INTO A PLASMA PROCESSING CHAMBER OF A PLASMA PROCESSING SYSTEM IGNITE A PLASMA IN THE PLASMA PROCESSING SYSTEM TO INITIATE A SURFACE MODIFICATION PROCESS FOR A LAYER FORMED ON A SUBSTRATE ACQUIRE OPTICAL EMISSION SPECTRA FROM AN - 216 OPTICAL EMISSION SPECTROSCOPY SYSTEM ATTACHED TO THE PLASMA PROCESSING CHAMBER, DURING THE SURFACE MODIFICATION PROCESS FOR THE LAYER 220 7 ,- 224