POLISHING COMPOSITIONS AND METHODS OF USE THEREOF

• Main Authors: MISHRA, Abhudaya, LEONOV, Alexei P
• Format: Patent
• Language: English
• Published: 30.10.2019
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 04 October 2018 (04.10.2018) W I PO I PCT IiiimmomiolollmonolomoninomoloilomovoimIE (10) International Publication Number WO 2018/183310 Al (51) International Patent Classification: C09G 1/02 (2006.01) H01L 21/306 (2006.01) (21) International Application Number: PCT/US2018/024543 (22) International Filing Date: 27 March 2018 (27.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/472,788 29 March 2017 (29.03.2017) US (71) Applicant: FUJIFILM PLANAR SOLUTIONS, LLC [US/US]; 6550 South Mountain Road, Mesa, Arizona 85212 (US). (72) Inventors: LEONOV, Alexei P.; 4118 E Jasper Dr., Gilbert, Arizona 85296 (US). MISHRA, Abhudaya; 1819 E. Cascade Dr., Gilbert, Arizona 85234 (US). (74) Agent: ZHANG, Tony et al.; Fish & Richardson P.C., P.O. Box 1022, Minneapolis, Minnesota 55440-1022 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: - with international search report (Art. 21(3)) (54) Title: POLISHING COMPOSITIONS AND METHODS OF USE THEREOF Z2 NH 1-1 O co 00 O C (57) : The disclosure provides chemical mechanical polishing compositions and methods for polishing polysilicon films with high removal rates. The compositions include 1) an abrasive; 2): Formula (I) at least one compound of structure (I): (I), 3) at least one compound of structure (II): Formula (II); and 4) water; in which the composition does not include tetramethylammonium hydroxide or a salt thereof. The variables n, Ri-R 7 , X, Y, and Zi -Z3 in structures (I) and (II) are defined in the Specification. The synergistic effect of the compounds of structures (I) and (II) in these chemical mechanical polishing compositions leads to high polysilicon films material removal rate during polishing.