MARKER STRUCTURE FOR ALIGNMENT OR OVERLAY TO CORRECT PATTERN INDUCED DISPLACEMENT, MASK PATTERN FOR DEFINING SUCH A MARKER STRUCTURE AND LITHOGRAPHIC PROJECTION APPARATUS USING SUCH A MASK PATTERN

A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment...

Full description

Saved in:
Bibliographic Details
Main Authors HENDRICKX, ERIC HENRI JAN, DUSA, MIRCEA, RICHARD JOHANNES FRANCISCUS, COLINA, LUIS ALBERTO COLINA SANTAMARIA, ALEXANDER HENDRIKUS MARTINUS, FINDERS, JOZEF MARIA, VANDENBERGHE, GEERT, VAN DER HOFF, VAN HAREN
Format Patent
LanguageEnglish
Published 28.02.2005
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.
Bibliography:Application Number: SG20040004319