SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device includes replacing sacrificial layers with conductive patterns through slits and at least one opening that pass through a stack structure. The stack structure includes interlayer insulating layers and the sacrificial layers. The interlayer insulating...

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Bibliographic Details
Main Author Yeo Jin JEONG
Format Patent
LanguageEnglish
Published 29.06.2020
Subjects
ELECTRICITY
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Summary:A method of manufacturing a semiconductor device includes replacing sacrificial layers with conductive patterns through slits and at least one opening that pass through a stack structure. The stack structure includes interlayer insulating layers and the sacrificial layers. The interlayer insulating layers and the sacrificial layers surround a support and are alternately stacked on each other.
Bibliography:Application Number: SG20191007460T