Variable Resistance Memory Device And Method Of Manufacturing The Same

A variable resistance memory device includes a first conductive line disposed on a substrate, a second conductive line disposed on the first conductive line and intersecting the first conductive line, and a memory cell disposed between the first conductive line and the second conductive line. The me...

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Bibliographic Details
Main Authors YONGJIN PARK, GYUHWAN OH, DONGJUN SEONG, JUNHWAN PAIK, HYUNGJONG JEONG
Format Patent
LanguageEnglish
Published 29.04.2020
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Summary:A variable resistance memory device includes a first conductive line disposed on a substrate, a second conductive line disposed on the first conductive line and intersecting the first conductive line, and a memory cell disposed between the first conductive line and the second conductive line. The memory cell includes a variable resistance pattern, and a heater electrode disposed on the variable resistance pattern. The heater electrode includes a through-hole penetrating the heater electrode. The through-hole exposes one surface of the variable resistance pattern.
Bibliography:Application Number: SG20191006590Q