ELECTROPHYSICAL MEASUREMENT METHOD FOR NANOSCALE METAL FILM ON SEMICONDUCTOR OR DIELECTRIC SUBSTRATE STRUCTURE

FIELD: physics. ^ SUBSTANCE: metal film semiconductor or dielectric substrate structure is mounted behind one-dimensional photon crystal consisting of alternating layers of various dielectric permeability values damaged geometry with planes perpendicular to electromagnetic radiation propagation dire...

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Main Authors MERDANOV MERDAN KAZIMAGOMEDOVICH, USANOV DMITRIJ ALEKSANDROVICH, SKVORTSOV VLADIMIR SERGEEVICH, ABRAMOV ANTON VALER'EVICH, SKRIPAL' ALEKSANDR VLADIMIROVICH, BOGOLJUBOV ANTON SERGEEVICH
Format Patent
LanguageEnglish
Russian
Published 20.03.2009
Subjects
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Summary:FIELD: physics. ^ SUBSTANCE: metal film semiconductor or dielectric substrate structure is mounted behind one-dimensional photon crystal consisting of alternating layers of various dielectric permeability values damaged geometry with planes perpendicular to electromagnetic radiation propagation direction and parallel to plane of measured metal film on substrate structure. ^ EFFECT: extended range of measured thicknesses and class of investigated materials though increasing size of changing reflectivity factor and transmission coefficient, higher sensitivity and possibility for measurements in narrow frequency range. ^ 4 dwg
Bibliography:Application Number: RU20070134232