ELECTROPHYSICAL MEASUREMENT METHOD FOR NANOSCALE METAL FILM ON SEMICONDUCTOR OR DIELECTRIC SUBSTRATE STRUCTURE
FIELD: physics. ^ SUBSTANCE: metal film semiconductor or dielectric substrate structure is mounted behind one-dimensional photon crystal consisting of alternating layers of various dielectric permeability values damaged geometry with planes perpendicular to electromagnetic radiation propagation dire...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Russian |
Published |
20.03.2009
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Subjects | |
Online Access | Get full text |
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Summary: | FIELD: physics. ^ SUBSTANCE: metal film semiconductor or dielectric substrate structure is mounted behind one-dimensional photon crystal consisting of alternating layers of various dielectric permeability values damaged geometry with planes perpendicular to electromagnetic radiation propagation direction and parallel to plane of measured metal film on substrate structure. ^ EFFECT: extended range of measured thicknesses and class of investigated materials though increasing size of changing reflectivity factor and transmission coefficient, higher sensitivity and possibility for measurements in narrow frequency range. ^ 4 dwg |
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Bibliography: | Application Number: RU20070134232 |