METHOD FOR PRODUCTION OF BATCH FOR WURTZITE-STRUCTURE SINGLE CRYSTAL GROWTH

• Main Authors: DOMOROSHCHINA E.N, DUBOVSKIJ A.B, DOROGOVIN B.A, STEPANOV S.JU, FILIPPOV I.M, STEPANOV A.S
• Format: Patent
• Language: English; Russian
• Published: 27.03.2005
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

FIELD: chemical technology, in particular production of polycrystalline batch for wurtzite-structure single crystal growth. ^ SUBSTANCE: claimed method for production of polycrystalline batch for wurtzite-structure oxide single crystal growth of formula LiMeO2, wherein Me refers aluminum or gallium, includes mixing of metal (Me) oxide with lithium carbonate in stoichiometric ratio and sintering in crucible. Starting materials before mixing are crushed to provide particles of size not more than 2 mum and heated in limits of their stability. Sintering is carried out at temperature being equal to 87-88 % of single crystal melting point, for 6 h in alundum crucible. Said wurtzite-structure single crystals are useful in substrate preparation for epitaxial growth of gallium nitride. Method of present invention makes it possible to obtain batch in form of shaped pallets with various size in limits of crucible diameter. ^ EFFECT: batch for high quality single crystal growth. ^ 1 tbl, 1 ex