METHOD FOR MEASURING ELECTROPHYSICAL PARAMETERS OF THIN SILICON DIOXIDE FILMS OF GATES

FIELD: measuring parameters of gate insulator. ^ SUBSTANCE: proposed method includes evaluation of set of parameters of many MIS structures on entire wafer within its single trace, measurement of pre-breakdown current-voltage characteristic of MIS structure, breakdown voltage of gate insulator and c...

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Bibliographic Details
Main Authors PLOTNIKOV JU.I, DUDNIKOV A.S, ZAJTSEV N.A, EREMENKO A.N, MIKHALIN V.D, GORNEV E.S
Format Patent
LanguageEnglish
Russian
Published 10.03.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:FIELD: measuring parameters of gate insulator. ^ SUBSTANCE: proposed method includes evaluation of set of parameters of many MIS structures on entire wafer within its single trace, measurement of pre-breakdown current-voltage characteristic of MIS structure, breakdown voltage of gate insulator and charge injected in gate dielectric before its irreversible breakdown in single measurement process. Thus, electrophysical parameters of MIS structure are determined within singe measurement cycle. ^ EFFECT: reduced time taken to measure characteristics of gate insulator on wafer. ^ 1 cl, 2 tbl
Bibliography:Application Number: RU20020132010