PROCESS OF MANUFACTURE OF HIGH-POWER SHF FIELD-EFFECT TRANSISTORS WITH SCHOTTKY BARRIER

FIELD: microelectronics, manufacture of discrete devices and integrated circuits. SUBSTANCE: in compliance with process of manufacture of high-power SHF field-effect transistors with Schottky barrier n+-n structure of GaAs is formed by ion doping of semi- insulating substrate with subsequent high-te...

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Bibliographic Details
Main Authors GOLIKOV A.V, PROSKUROVSKIJ D.I, KAGADEJ V.A, ROMAS' L.M, SHIROKOVA L.S
Format Patent
LanguageEnglish
Russian
Published 20.04.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:FIELD: microelectronics, manufacture of discrete devices and integrated circuits. SUBSTANCE: in compliance with process of manufacture of high-power SHF field-effect transistors with Schottky barrier n+-n structure of GaAs is formed by ion doping of semi- insulating substrate with subsequent high-temperature firing. Dielectric film transparent to penetration of hydrogen is deposited on surface of structure after high-temperature firing, structure is treated in atomic hydrogen at temperature 100-200 C in the course of 20-120 min, dielectric film is removed and low-temperature firing at 400-475 C is conducted in the course of 5-20 min. Dielectric film is produced from SiO with thickness d=3-15 nm. EFFECT: enhanced operational power and raised breakdown voltage of drain. 2 cl, 2 tbl
Bibliography:Application Number: RU20020102040