PROCESS OF MANUFACTURE OF HIGH-POWER SHF FIELD-EFFECT TRANSISTORS WITH SCHOTTKY BARRIER
FIELD: microelectronics, manufacture of discrete devices and integrated circuits. SUBSTANCE: in compliance with process of manufacture of high-power SHF field-effect transistors with Schottky barrier n+-n structure of GaAs is formed by ion doping of semi- insulating substrate with subsequent high-te...
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Main Authors | , , , , |
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Format | Patent |
Language | English Russian |
Published |
20.04.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | FIELD: microelectronics, manufacture of discrete devices and integrated circuits. SUBSTANCE: in compliance with process of manufacture of high-power SHF field-effect transistors with Schottky barrier n+-n structure of GaAs is formed by ion doping of semi- insulating substrate with subsequent high-temperature firing. Dielectric film transparent to penetration of hydrogen is deposited on surface of structure after high-temperature firing, structure is treated in atomic hydrogen at temperature 100-200 C in the course of 20-120 min, dielectric film is removed and low-temperature firing at 400-475 C is conducted in the course of 5-20 min. Dielectric film is produced from SiO with thickness d=3-15 nm. EFFECT: enhanced operational power and raised breakdown voltage of drain. 2 cl, 2 tbl |
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Bibliography: | Application Number: RU20020102040 |