FIELD-EFFECT TRANSISTOR

• Main Authors: ALEKSEEV A.N, SOKOLOV I.A, CHALYJ V.P, KRASOVITSKIJ D.M, POGOREL'SKIJ JU.V
• Format: Patent
• Language: English; Russian
• Published: 27.01.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

FIELD: radio engineering; microwave devices and the like. SUBSTANCE: field-effect transistor structure based on Ga and Al nitrides incorporates substrate, AlyGa1-yN, insulating layer, channel layer, and AlxGa1-xN, barrier layer. Channel layer is made of AlzGa1-zN. where 0.12 > x .> 0.03, 1>=y>=x+0,1, being at boundary between channel and insulating layers and 1>=z>=x+0,1, between channel and barrier layers; channel layer thickness ranges between 3 and 20 nm, x, y, and z being molar fractions of Al in AlGaN composition. Insulating layer may be made of two sublayers, lower one adjacent to substrate has y at its boundary with the latter ranging between 0.5 and 0.7 and at its boundary with upper layer, between 0.7 and 1; upper layer has y at its boundary with lower layer ranging between 0.7 and 1 which monotonously reduces to y<=0,4. toward its boundary with channel layer. Barrier and/or insulating layers may have doping delta layer of silicon or oxygen. Field-effect transistor structure may have in addition AlGaON shielding layer covering barrier layer. EFFECT: enhanced degradation stability of device. 4 cl, 4 dwg