METHOD OF MONOCRYSTALS GROWING FROM MELT

• Main Authors: BIRJUKOV E.N, KULIKOV V.I, AMOSOV V.I, KHARCHENKO V.A
• Format: Patent
• Language: English; Russian
• Published: 27.01.2004
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

FIELD: production of monocrystals. SUBSTANCE: the invention presents a method used for the calibrated profiled volumetric monocrystals growing from melts of refractory oxides by the Stepanov method. The method of growing monocrystals from melt with a seed crystal from a king-pot with a die provides, that the growing is carried out at correspondence of crystallographic faces of the seed crystal to the form of the die and to the form of the radial isotherm in a melt, which is created by the heater repeating the form of the king-pot installed in the heater made of the bent U-shaped lamels, gathered in a circle or sections with total amount of lamels equal to 12 K, where K is an integer; at that correspondence of the form of the radial isotherm to the form of the die is performed by selection of a number of the lamels in the sections of the heater defined by the formula: , where m is a number of the growing crystal faces or a number of sides of the die; n- difference of the lamels numbers in the sections (it is defined by the difference of a rectangle sides. Technical result of the stated invention is prevention of creation of the small-angle boundaries in the growing monocrystals, increase of perfection of their structure, a capability of growing of the bulky profiled calibrated monocrystals and increased output of the suitable at manufacture items of the given profile. EFFECT: prevention of creation of the small-angled boundaries in the growing monocrystals, increased perfection of the monocrystals structure, possibility of growing of the bulky profiled calibrated monocrystals, increased output of good pieces. 3 cl, 2 dwg