METHOD OF PRODUCING SILICON TETRAFLUORIDE

inorganic chemistry, particularly, methods of production of metalloid fluorides, more specifically, methods of production of silicon tetrafluoride. SUBSTANCE: method includes holding of initial salt Na2SiF6 for 1.5-3 h at temperature of 300-350 C and low pressure decreased down to 5 mm Hg; treatment...

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Main Authors MEN'SHOV V.S, RABINOVICH R.L, L'VOV V.A, PETROV JU.A, TURKIN V.S, SAPOZHNIKOV M.V, KUZNETSOV A.S
Format Patent
LanguageEnglish
Russian
Published 20.05.2002
Edition7
Subjects
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Summary:inorganic chemistry, particularly, methods of production of metalloid fluorides, more specifically, methods of production of silicon tetrafluoride. SUBSTANCE: method includes holding of initial salt Na2SiF6 for 1.5-3 h at temperature of 300-350 C and low pressure decreased down to 5 mm Hg; treatment of reaction mass with fluorine (possibly in mixture with inert gas) for 0.5-1.5 h with supply of fluorine in ratio of Na2SiF6:F2 from 50 to 100; reduction of pressure after discontinuation of fluorine supply; thermal decomposition of Na2SiF6 after discontinuation of liberation of gases with simultaneous withdrawal of gaseous silicon tetrafluoride. Realization of proposed method results in obtaining of silicon tetrafluoride up to 99.991 wt.% pure and sodium fluoride up to 99.0 wt.%. Silicon tetrafluoride is used in electronic industry and for imparting water repelling properties to articles, resistance to corrosion and attrition. EFFECT: higher efficiency. 2 cl, 1 dwg, 1 tbl
Bibliography:Application Number: RU20010126317