METHOD FOR POLISHING OF WAFERS OF CERAMIC MATERIALS

semiconductor equipment, applicable in production of passive boards for hybrid integrated circuits. SUBSTANCE: the method for polishing consists in influence of a tool and polishing compound on the wafer surface. The polishing compound contains diamond powder, glycerin and a synthetic detergent. Dil...

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Bibliographic Details
Main Authors SAVUSHKIN JU.A, ROGOV V.V
Format Patent
LanguageEnglish
Published 10.05.2001
Edition7
Subjects
DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TRANSPORTING
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Summary:semiconductor equipment, applicable in production of passive boards for hybrid integrated circuits. SUBSTANCE: the method for polishing consists in influence of a tool and polishing compound on the wafer surface. The polishing compound contains diamond powder, glycerin and a synthetic detergent. Diluent is dosed to the zone of treatment. The quantities of polishing compound and diluent are taken from relation 1:(3-6) relative units respectively. Polishing is carried out to a depth of at least 30mum, at least in two stages. I n the first stage water is used as diluent, and in the second stage - 3.4-11.0 - percent colloidal solution of silicon dioxide. In the second stage the allowance of 15 mum is removed. EFFECT: improved quality of surface for subsequent bonding of wafers by vacuum deposition. 1 tbl, 1 ex
Bibliography:Application Number: RU19980119139