INFRARED RADIATION SOURCE

microelectronics; low-inertia microelectronic infrared radiation sources. SUBSTANCE: device has silicon substrate carrying electroluminescent member made of silicon-containing material and provided with current-conducting contacts; this member is electrically insulated from substrate by means of pas...

Full description

Saved in:
Bibliographic Details
Main Authors KORLJAKOV A.V, LUCHININ V.V, KOSTROMIN S.V, NIKITIN I.V
Format Patent
LanguageEnglish
Russian
Published 20.04.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:microelectronics; low-inertia microelectronic infrared radiation sources. SUBSTANCE: device has silicon substrate carrying electroluminescent member made of silicon-containing material and provided with current-conducting contacts; this member is electrically insulated from substrate by means of passivating SiO2 coating. Electroluminescent member is made of SiC in the form of bridge. Most reasonable location of electroluminescent member is in hole made in substrate. EFFECT: enlarged infrared radiation range. 3 cl, 4 dwg, 1 tbl
Bibliography:Application Number: RU19990114575