LIGHT SOURCE

FIELD: semiconductor optoelectronics; solid-state light sources. SUBSTANCE: device has fluorescent semiconductor chips with p-n junctions placed in N depressions of base and relevant contacts on their both sides; base is made of silicon strip covered with insulating layer carrying isolated bonding s...

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Bibliographic Details
Main Authors KHAN V.A, KARPOVICH N.V, KRIVOROTOV N.P
Format Patent
LanguageEnglish
Published 27.11.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:FIELD: semiconductor optoelectronics; solid-state light sources. SUBSTANCE: device has fluorescent semiconductor chips with p-n junctions placed in N depressions of base and relevant contacts on their both sides; base is made of silicon strip covered with insulating layer carrying isolated bonding sections that cover depressions and adjacent sections of base; upper contact of each i-th chip is connected through wire electrode to bonding section of i-th depression and upper contact of i-th chip, to bonding area above base surface. EFFECT: improved power, reduced size, facilitated manufacture. 1 cl, 2 dwg
Bibliography:Application Number: RU19970109754