LIGHT SOURCE
FIELD: semiconductor optoelectronics; solid-state light sources. SUBSTANCE: device has fluorescent semiconductor chips with p-n junctions placed in N depressions of base and relevant contacts on their both sides; base is made of silicon strip covered with insulating layer carrying isolated bonding s...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
27.11.1999
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | FIELD: semiconductor optoelectronics; solid-state light sources. SUBSTANCE: device has fluorescent semiconductor chips with p-n junctions placed in N depressions of base and relevant contacts on their both sides; base is made of silicon strip covered with insulating layer carrying isolated bonding sections that cover depressions and adjacent sections of base; upper contact of each i-th chip is connected through wire electrode to bonding section of i-th depression and upper contact of i-th chip, to bonding area above base surface. EFFECT: improved power, reduced size, facilitated manufacture. 1 cl, 2 dwg |
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Bibliography: | Application Number: RU19970109754 |