METHOD FOR CONTROLLING GROWTH OF EPITAXIAL SEMICONDUCTOR STRUCTURE

FIELD: semiconductor materials, in particular, corpuscular deposition assemblies. SUBSTANCE: method involves controlling deposition temperature and excess of one of source materials in corpuscular beam by means of preliminary detection of power ratio for desorption from each of these materials from...

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Bibliographic Details
Main Authors KORLJAKOV A.V, LUCHININ V.V, KOSTROMIN S.V
Format Patent
LanguageEnglish
Published 27.06.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:FIELD: semiconductor materials, in particular, corpuscular deposition assemblies. SUBSTANCE: method involves controlling deposition temperature and excess of one of source materials in corpuscular beam by means of preliminary detection of power ratio for desorption from each of these materials from substrate surface and generation of corpuscular deposition beam taking into account stochiometric composition excess of material with minimal desorption power. Preferable excess is within range of 3-10%. Production of multilayer composition based on silicon carbide and aluminum nitride involves keeping substrate temperature in range of 900-950 C and running deposition in one stage from target with mobile operation regions, which have at least one source component of composition layer to be deposited. EFFECT: increased field of application, increased reliability of controlling growth of epitaxial structures. 3 cl, 5 tbl
Bibliography:Application Number: RU19980103183