PROCESS FOR PREPARING N-TYPE CUO THIN FILMS, IN SITU, BY HYDROTHERMAL METHOD

• Main Authors: MICLAU MARINELA, URSU DANIEL HORAŢIU
• Format: Patent
• Language: English; Romanian
• Published: 29.07.2016
• Subjects: CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT THEREOF; METALLURGY; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS; NANOTECHNOLOGY; PERFORMING OPERATIONS; TRANSPORTING

The invention relates to a process for preparing n-type CuO thin films to be used as materials for solar cells, memory resistors and gas sensors. According to the invention, the process uses the hydrothermal method for depositing the n-type copper oxide layer onto a copper plate having two functions: of a substrate and of a precursor material for the thin film, in a medium of potassium hydroxide solution 2.5 M, in tight teflon autoclaves with steel jacket, which are heated to the temperature of 250°C for 30 min, to result in n-type semiconductor copper oxide thin films. Invenţia se referă la un procedeu de preparare a filmelor subţiri de CuO de tip n, utilizate ca material pentru celule solare, rezistori cu memorie şi senzori de gaz. Procedeul conform invenţiei constă în metoda hidrotermală de depunere a stratului de oxid de cupru de tip n pe o plăcuţă de cupru, ce are două roluri: ca substrat şi material precursor pentru filmul subţire, în mediu de soluţie de hidroxid de potasiu 2,5 M, în autoclave etanşe de teflon, cu cămaşă de oţel, care sunt încălzite la temperatura de 250°C, timp de 30 min, din care rezultă filme subţiri de oxid de cupru, cu caracter semiconductor de tip n.