Method for producing gallium-containing monocrystalline nitride and the gallium-containing monocrystalline nitride, produced by this method

• Main Authors: KUCHARSKI, ROBERT, GRZYBOWSKA, DOROTA, KAROLCZUK, WERONIKA, ZAJĄC, MARCIN
• Format: Patent
• Language: English; Polish
• Published: 29.03.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; COMPOUNDS THEREOF; CRYSTAL GROWTH; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention relates to a method for producing monocrystalline gallium containing nitride from a source material containing gallium in the environment of supercritical ammonia solvent with the addition of a mineralizer containing the element of Group I (IUPAC, 1989), wherein in an autoclave two temperature zones are generated, i.e. a dissolution zone with lower temperature containing the source material, and a crystallization zone located below it with higher temperature, containing at least one seed. At least two further components are introduced into the process environment, namely an oxygen getter in molar ratio to ammonia ranging from 0.0001 to 0.2, and an acceptor dopant in molar ratio to ammonia not higher than 0.1, said acceptor dopant being manganese, iron, vanadium or carbon, or a combination thereof. The invention also relates to a monocrystalline gallium containing nitride prepared by this method.