METHOD FOR THE PRODUCTION OF A COMPOUND SEMICONDUCTOR MATERIAL BY MEANS OF GAS PHASE EPITAXY

• Main Authors: HABEL, FRANK, EICHLER, STEFAN, LEIBIGER, GUNNAR
• Format: Patent
• Language: English; Polish
• Published: 10.08.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Compound semi-conductor material manufacturing involves applying gas phase epitaxies of a reactor (20) with in a mixture of feed gases, which is carried along single or multiple reaction gases in the direction of a substrate (16). A predetermined value is obtained for the concentration of hydrogen, which is reached at the surface of the substrate by adjusting a volume flow rate portion of a feed gas in the mixture. Independent claims are included for: (1) a method for producing a III-N layer or III-N bulk crystal, which involves applying gas phase epitaxies of a reactor and has a feed gas, preferably argon, neon, helium or krypton; and (2) a reactor for manufacturing a compound semi-conductor material, particularly III-N bulk crystal or a III-N layer.