TIN OXIDE SEMICONDUCTING NANOMATERIAL, GAS SENSOR ELECTRODE AND PROCESS FOR FORMING THE SAME, AND GAS SENSING DEVICE INCLUDING THE GAS SENSOR ELECTRODE

A gas sensing device (20) includes a gas sensor electrode (10), a variable resistor (21) electrically coupled in parallel to the gas sensor electrode (10), and a voltage measuring circuit (22) electrically coupled in parallel to the variable resistor (21). The gas sensor electrode (10) includes a su...

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Bibliographic Details
Main Authors BRIONES, Jonathan C, SANTOS, Gil Nonato C
Format Patent
LanguageEnglish
Published 16.03.2020
Subjects
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Summary:A gas sensing device (20) includes a gas sensor electrode (10), a variable resistor (21) electrically coupled in parallel to the gas sensor electrode (10), and a voltage measuring circuit (22) electrically coupled in parallel to the variable resistor (21). The gas sensor electrode (10) includes a substrate (11) and a gas sensing layer (12) that is formed on the substrate (11) and made of a tin oxide semiconducting nanomaterial having a resistivity not greater than 5000 ohm-meter. A process for forming the gas sensor electrode (10) is also disclosed
Bibliography:Application Number: PH20191000278