METHODS AND APPARATI FOR MAKING THIN SEMI-CONDUCTOR WAFERS WITH LOCALLY CONTROLLED REGIONS THAT ARE RELATIVELY THICKER THAN OTHER REGIONS AND SUCH WAFERS

Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180 - 250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength....

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Bibliographic Details
Main Authors WALLACE, RICHARD, L, JONCZYK, RALF, LORENZ, ADAM, L, SACHS, EMANUEL, M, HUDELSON, G.D. STEPHEN
Format Patent
LanguageEnglish
Published 09.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180 - 250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6 x 1017 atoms/cc, preferably less than 2 x 1017, total oxygen less than 8. 75 x 1017 atoms/cc, preferably less than 5. 25 x 1017. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.
Bibliography:Application Number: PH20161502141