GAS FLOW OPTIMIZATION IN RETICLE STAGE ENVIRONMENT

A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprisin...

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Main Authors REMIE MARINUS, BALLEGOIJ ROBERTUS, SINGH CHATTARBIR, WESTERLAKEN JAN, LOOPSTRA ERIK, FONSECA JUNIOR JOSÃ, CUYPERS KOEN, BOXTEL FRANK, VEN HENRICUS, WARD CHRISTOPHER, ONVLEE JOHANNES, BOKHOVEN LAURENTIUS, SCHUSTER MARK, ANDRADE OLIVEIRA MARCELO, BURBANK DANIEL
Format Patent
LanguageEnglish
Published 21.08.2014
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate (410) positioned between the movable stage (401) and the projection system (208). The plate includes an opening (411) that comprises a first sidewall (411a) and a second sidewall (411b). The plate may be configured to provide a gas flow pattern (424) in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system.
Bibliography:Application Number: NL20142012291