PHOTODIODE ARRAYS AND METHODS OF FABRICATION

Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface. The photodiode array also includes a plurality of refilled conductive vias through the silicon wafer, wherein the refilled conductive vias h...

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Bibliographic Details
Main Authors LI WEN, ABDELAZIZ IKHLEF
Format Patent
LanguageEnglish
Published 09.07.2013
Subjects
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
TESTING
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Summary:Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface. The photodiode array also includes a plurality of refilled conductive vias through the silicon wafer, wherein the refilled conductive vias have a doping type different than the doping type of the substrate, and an interface between the refilled conductive vias and the substrate form diode junctions. The photodiode array further includes a patterned doped layer on the first surface overlapping the refilled conductive vias, wherein the patterned doped layer defines an array of photodiodes.
Bibliography:Application Number: NL20122010018