SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

A wire 10 is bonded to an aluminium pad 80 within a hole in insulating layers 90,27, the lower one of which 90 is of aluminium oxide, and the exposed area of the aluminium pad 80 surrounding the bond is protected against corrosion by a layer 12 of aluminium oxide. The wire 10 is also of aluminium an...

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Bibliographic Details
Main Author TAMOTSU USAMI
Format Patent
LanguageEnglish
Published 31.12.1987
Edition4
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A wire 10 is bonded to an aluminium pad 80 within a hole in insulating layers 90,27, the lower one of which 90 is of aluminium oxide, and the exposed area of the aluminium pad 80 surrounding the bond is protected against corrosion by a layer 12 of aluminium oxide. The wire 10 is also of aluminium and is protected by a layer 13 of aluminium oxide formed simultaneously with the layer 12 on the pad 80 by thermal oxidation. The upper insulating layer 27 is of PSG.
Bibliography:Application Number: MY19870000228