METHOD FOR FORMING FILM AND METHOD FOR FORMING ALUMINUM NITRIDE FILM
The present disclosure provides a method (100) for forming a film and a method for forming an aluminum nitride film, in which two times of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing tar...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
01.04.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The present disclosure provides a method (100) for forming a film and a method for forming an aluminum nitride film, in which two times of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate (31), and the aluminum nitride film may serve as a buffer layer (32) between a substrate (31) and a gallium nitride layer (33) in an electronic device (30), so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device. |
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Bibliography: | Application Number: MY2018PI02524 |