METHOD FOR FORMING FILM AND METHOD FOR FORMING ALUMINUM NITRIDE FILM

• Main Authors: GENG, Yujie, WANG, Jun, GUO, Bingliang, MA, Huaichao, DONG, Boyu
• Format: Patent
• Language: English
• Published: 01.04.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present disclosure provides a method (100) for forming a film and a method for forming an aluminum nitride film, in which two times of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate (31), and the aluminum nitride film may serve as a buffer layer (32) between a substrate (31) and a gallium nitride layer (33) in an electronic device (30), so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.