PARALLEL PLATE REACTOR FOR UNIFORM THIN FILM DEPOSITION WITH REDUCED TOOL FOOT-PRINT

• Main Authors: BUECHEL, ARTHUR, WAHLI, GUILLAUME, MAI, JOACHIM, SCHULZE, THOMAS, STRAHM, BENJAMIN
• Format: Patent
• Language: English
• Published: 15.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

THE PRESENT INVENTION RELATES TO A CAPACITIVE-COUPLED PARALLEL PLATE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION REACTOR (1, 1'), COMPRISING A GAS DISTRIBUTION UNIT (10) BEING INTEGRATED IN AN RF ELECTRODE (2, 36, 50, 50') AND COMPRISING A GAS OUTLET (8A, 8B, 34, 43A, 43B). IT IS THE OBJECT OF THE PRESENT INVENTION TO PROVIDE PARALLEL PLATE REACTOR (1, 1') OF THE REFERENCED TYPE WITH WHAT LAYERS WITH HIGH THICKNESS HOMOGENEITY AND QUALITY CAN BE PRODUCED. THE OBJECT IS SOLVED BY A CAPACITIVE-COUPLED PARALLEL PLATE PLASMA ENHANCED VAPOUR DEPOSITION REACTOR (1, 1') OF THE MENTIONED TYPE WHEREIN THE GAS DISTRIBUTION UNIT (10) COMPRISES A MULTIPLE-STAGE SHOWERHEAD CONSTRUCTED IN SUCH A WAY THAT IT PROVIDES AN INDEPENDENT ADJUSTMENT OF GAS DISTRIBUTION AND GAS EMISSION PROFILE OF THE GAS DISTRIBUTION UNIT (10).