METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL

• Main Authors: GEORG BRENNINGER, WALDEMAR STEIN, JOSEF LOBMEYER
• Format: Patent
• Language: English
• Published: 15.02.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

THE INVENTION RELATES TO A METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL, COMPRISING INDUCTIVE HEATING OF A SILICON PLATE (1); MELTING GRANULAR SILICON ON THE SILICON PLATE (1); AND FEEDING THE MOLTEN SILICON THROUGH A FLOW CONDUIT (4) IN THE CENTER OF THE PLATE (1) TO A PHASE BOUNDARY, AT WHICH A SILICON SINGLE CRYSTAL CRYSTALLIZES, INDUCTIVE HEATING OF A SILICON RING (5) BEFORE THE INDUCTIVE HEATING OF THE PLATE (1) THE RING (5) LYING ON THE PLATE (1) AND HAVING A LOWER RESISTIVITY THAN THE PLATE (1); AND MELTING THE RING.