METHOD FOR PRODUCING A MULTIPLICITY OF SEMICONDUCTOR WAFERS BY PROCESSING A SINGLE CRYSTAL

• Main Authors: HANS OELKRUG, JOSEF SCHUSTER
• Format: Patent
• Language: English
• Published: 31.03.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METALLURGY; PERFORMING OPERATIONS; POLISHING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

THE INVENTION RELATES TO A METHOD FOR PRODUCING A MULTIPLICITY OF SEMICONDUCTOR WAFERS BY PROCESSING A SINGLE CRYSTAL, THE CENTRAL LONGITUDINAL AXIS (M) OF WHICH HAS AN ORIENTATION THAT DEVIATES FROM A SOUGHT ORIENTATION OF THE CRYSTAL LATTICE OF THE SEMICONDUCTOR WAFERS. THE METHOD COMPRISES SLICING AT LEAST ONE BLOCK FROM A SINGLE CRYSTAL PRESENT IN A GROWN STATE ALONG CUTTING PLANES (SA) PERPENDICULAR TO A CRYSTALLOGRAPHIC AXIS (A) REPRESENTING THE SOUGHT ORIENTATION OF THE CRYSTAL LATTICE OF THE SEMICONDUCTOR WAFERS; GRINDING THE LATERAL SURFACE OF THE BLOCK AROUND THE CRYSTALLOGRAPHIC AXIS (A); AND SLICING A MULTIPLICITY OF SEMICONDUCTOR WAFERS FROM THE GROUND BLOCK ALONG CUTTING PLANES (SA) PERPENDICULAR TO THE CRYSTALLOGRAPHIC AXIS (A).