COMPOSITIONS AND METHODS FOR CMP OF PHASE CHANGE ALLOYS

THE PRESENT INVENTION PROVIDES A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION SUITABLE FOR POLISHING A SUBSTRATE COMPRISING A PHASE CHANGE ALLOY (PCA), SUCH AS A GERMANIUM-ANTIMONY-TELLURIUM (GST) ALLOY. THE COMPOSITION COMPRISES NOT MORE THAN 6 PERCENT BY WEIGHT OF A PARTICULATE ABRASIVE MATERIA...

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Bibliographic Details
Main Authors ANJUR, SRIRAM, DYSARD, JEFFREY, FEENEY, PAUL
Format Patent
LanguageEnglish
Published 15.02.2013
Subjects
ADHESIVES
CHEMISTRY
DYES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
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Summary:THE PRESENT INVENTION PROVIDES A CHEMICAL-MECHANICAL POLISHING (CMP) COMPOSITION SUITABLE FOR POLISHING A SUBSTRATE COMPRISING A PHASE CHANGE ALLOY (PCA), SUCH AS A GERMANIUM-ANTIMONY-TELLURIUM (GST) ALLOY. THE COMPOSITION COMPRISES NOT MORE THAN 6 PERCENT BY WEIGHT OF A PARTICULATE ABRASIVE MATERIAL IN COMBINATION WITH AN OPTIONAL OXIDIZING AGENT, AT LEAST ONE CHELATING AGENT, AND AN AQUEOUS CARRIER THEREFOR. THE CHELATING AGENT COMPRISES A COMPOUND OR COMBINATION OF COMPOUNDS CAPABLE OF CHELATING A PHASE CHANGE ALLOY OR COMPONENT THEREOF (E.G., GERMANIUM, INDIUM, ANTIMONY AND/OR TELLURIUM SPECIES) THAT IS PRESENT IN THE SUBSTRATE, OR CHELATING A SUBSTANCE THAT IS FORMED FROM THE PCA DURING POLISHING OF THE SUBSTRATE WITH THE CMP COMPOSITION. A CMP METHOD FOR POLISHING A PHASE CHANGE ALLOY-CONTAINING SUBSTRATE UTILIZING THE COMPOSITION IS ALSO DISCLOSED.
Bibliography:Application Number: MY2008PI02866