STRONTIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS

A PROCESS FOR PREPARING STRONTIUM DOPED MOLTEN SILICON FOR USE IN A SINGLE SILICON CRYSTAL GROWING PROCESS IS DISCLOSED. POLYSILICON IS DOPED WITH STRONTIUM AND MELTED IN A SILICA CRUCIBLE (10).DURING MELTING AND THROUGHOUT THE CRYSTAL GROWING PROCESS THE STRONTIUM ACTS AS A DEVITRIFICATION PROMOTER...

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Bibliographic Details
Main Authors STEVEN J. KELTNER, JOHN D. HOLDER, RICHARD J. PHILLIPS
Format Patent
LanguageEnglish
Published 31.07.2008
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A PROCESS FOR PREPARING STRONTIUM DOPED MOLTEN SILICON FOR USE IN A SINGLE SILICON CRYSTAL GROWING PROCESS IS DISCLOSED. POLYSILICON IS DOPED WITH STRONTIUM AND MELTED IN A SILICA CRUCIBLE (10).DURING MELTING AND THROUGHOUT THE CRYSTAL GROWING PROCESS THE STRONTIUM ACTS AS A DEVITRIFICATION PROMOTER (24) AND CREATES A LAYER OF DEVITRIFIED SILICA ON THE INSIDE CRUCIBLE SURFACE (16, 18) IN CONTACT WITH THE MELT RESULTING IN A LOWER LEVEL OF CONTAMINANTS IN THE MELT AND GROWN CRYSTAL.(FIG 2)
Bibliography:Application Number: MY2000PI01000