POLISHING COMPOSITION

A POLISHING COMPOSITION COMPRISING AN ABRASIVE HAVIING AN AVERAGE PRIMARY PARTICLE SIZE OF 200 NM OR LESS, AN OXIDIZING AGENT, AN ACID HAVING A pK1 OF 2 OR LESS AND /OR A SALT THEREOF, AND WATER, WHEREIN THE ACID VALUE (Y) OF THE POLISHING COMPOSITION IS 20MG KOH/G OR LESS 0.2 MG KOH/G OR MORE; A PR...

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Bibliographic Details
Main Authors TOSHIYA HAGIHARA, YOSHIAKI OSHIMA
Format Patent
LanguageEnglish
Published 30.11.2007
Subjects
ADHESIVES
CHEMISTRY
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
PHYSICS
POLISHES
POLISHING
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
TRANSPORTING
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Summary:A POLISHING COMPOSITION COMPRISING AN ABRASIVE HAVIING AN AVERAGE PRIMARY PARTICLE SIZE OF 200 NM OR LESS, AN OXIDIZING AGENT, AN ACID HAVING A pK1 OF 2 OR LESS AND /OR A SALT THEREOF, AND WATER, WHEREIN THE ACID VALUE (Y) OF THE POLISHING COMPOSITION IS 20MG KOH/G OR LESS 0.2 MG KOH/G OR MORE; A PROCESS FOR REDUCING FINE SCRATCHES OF A SUBSTRATE, COMPRISING POLISHING A SUBSTRATE TO BE POLISHED WITH THE ABOVE-MENTIONED POLISHING COMPOSITION; AND A METHOD FOR MANUFACTURING A SUBSTRATE, COMPRISING POLISHING A SUBSTRATE TO BE POLISHED WITH THE ABOVE-MENTIONED POLISHING COMPOSITION . THE POLISHING COMPOSITION CAN BE SUITABLY USED FOR FINAL POLISHING MEMORY HARD DISK SUBSTRATES AND POLISHING SEMICONDUCTOR ELEMENTS.
Bibliography:Application Number: MY2002PI02987