SEMICONDUCTOR PROCESSING EQUIPMENT HAVING IMPROVED PROCESS DRIFT CONTROL

• Main Author: WICKER, THOMAS E
• Format: Patent
• Language: English
• Published: 29.09.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A PLASMA PROCESSING CHAMBER INCLUDING A SLIP CAST PART HAVING A SURFACE THEREOF EXPOSED TO THE INTERIOR SPACE OF THE CHAMBER. THE SLIP CAST PART INCLUDES FREE SILICON CONTAINED THEREIN AND A PROTECTUVE LAYER ON THE SURFACE WHICH PROTECTS THE SILICON FROM BEING ATTACKED BY PLASMA IN THE INTERIOR SPACE OF THE CHAMBER.THE SLIP CAST PART CAN BE MADE OF SLIP CAST SILICON CARBIDE COATED WITH CVD SILICON CARBIDE. THE SLIP CAST PART CAN COMPRISE ONE OR MORE PARTS OF THE CHAMBER SUCH AS A WAFER PASSAGE INSERT (21), A MONOLITHIC OR TILED LINER (20), A PLASMA SCREEN(22), A SHOWERHEAD, DIELECTRIC MEMBER, OR THE LIKE. THE SLIP CAST PART REDUCES PARTICLE CONTAIMINATION AND REDUCES PROCESS DRIFT IN PLASMA PROCESSES SUCH AS PLASMA ETCHING OF DIELECTRIC MATERIALS SUCH AS SILICON OXIDE.