PROCESS FOR TEXTURING THE SURFACE OF A SILICON SUBSTRATE, STRUCTURED SUBSTRATE AND PHOTOVOLTAIC DEVICE COMPRISING SUCH A STRUCTURED SUBSTRATE
The invention relates to a process for texturing the surface of a silicon substrate, comprising a step of exposing said surface to an MDECR plasma generated, at least from argon, using between 1.5 W/cm2 and 6.5 W/cm2 of plasma power in a matrix distributed electron cyclotron resonance plasma source,...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English Spanish |
Published |
09.10.2015
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The invention relates to a process for texturing the surface of a silicon substrate, comprising a step of exposing said surface to an MDECR plasma generated, at least from argon, using between 1.5 W/cm2 and 6.5 W/cm2 of plasma power in a matrix distributed electron cyclotron resonance plasma source, the substrate bias being between 100 V and 300 V.
La invención se relaciona a un proceso para texturizar la superficie de un substrato de silicio, que comprende una etapa de exposición de la superficie a un plasma MDECR generado, por lo menos de argón, usando entre 1.5 W/cm2 y 6.5 W/cm2 de potencia de plasma en una fuente de plasma de resonancia ciclotrónica electrónica distribuida en matriz, la polarización del substrato que está entre 100 V y 300 V. |
---|---|
Bibliography: | Application Number: MX20140007392 |