METHOD OF FABRICATING SEMICONDUCTOR DEVICES ON A GROUP IV SUBSTRATE WITH CONTROLLED INTERFACE PROPERTIES AND DIFFUSION TAILS
Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxi...
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Main Authors | , , |
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Format | Patent |
Language | English Spanish |
Published |
30.04.2009
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Subjects | |
Online Access | Get full text |
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Summary: | Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the devices and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.
Se describen dispositivos electrónicos y opto-electrónicos que tienen compuestos III/V depositados epitaxialmente sobre el sustrato del grupo IV vecinales y métodos para fabricación de los mismos. Los dispositivos incluyen una capa de nucleación de AlAs sobre un sustrato de e. El sustrato del grupo IV contiene una unión p-n cuyo cambio de características durante el crecimiento epitaxial de las capas que contienen As es minimizado por la capa de nucleación de AlAs. La capa de nucleación de AlAs proporciona morfología mejorada de los dispositivos y medios para controlar la posición de la unión p-n cerca de la superficie del sustrato del grupo IV por medio de difusión de As y/o P y cerca del fondo de la estructura de III/V por medio de difusión minimizada del elemento del grupo IV. |
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Bibliography: | Application Number: MX20090001151 |