MOSFET OF LDD TYPE AND A METHOD FOR FABRICATING THE SAME

• Main Authors: HIROKI, AKIRA, KURIMOTO, KAZUMI, ODANAKA, SHINJI
• Format: Patent
• Language: English; Korean
• Published: 15.07.1997
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

없음. An MOS type semiconductor device comprises a semiconductor substrate including a p-type region doped with p-type impurities and having a surface and an MOS transistor formed in the p-type region, the MOS transistor including: an n-type source region formed in the p-type region; an n-type drain region formed in the p-type region and separated from the n-type source region by a predetermined distance; a channel region formed in the p-type region and located between the n-type source and drain regions; a pair of n-type impurity diffusion regions formed on both sides of the channel region and having an impurity concentration lower than that of the n-type source region; a gate insulating film formed on the surface of the semiconductor substrate, the gate insulating film directly covering the channel region and the pair of n-type impurity diffusion regions; a gate electrode formed on the gate insulating film; and side walls formed on the sides of the gate electrode, wherein each of the side walls has a bottom portion extending along the surface of the semiconductor substrate from each side of the gate electrode, and each of the n-type source and drain regions has a first portion covered with the bottom portion of the side wall and a second portion not covered with the bottom portion, the first portion being thinner than the second portion. A method for fabricating such an MOS type semiconductor device is also provided.