OXIDATION METHOD OF SEMICONDUCTOR DEVICE
A method for growing a thermal oxide layer in a formation of a semiconductor device is disclosed. The A method for growing a thermal oxide layer in a formation of a semiconductor device comprises the steps of: a) performing a first dry oxidation using oxygen gas at a predetermined temperature in a o...
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| Main Authors | , |
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| Format | Patent |
| Language | English Korean |
| Published |
18.01.1997
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| Edition | 6 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | A method for growing a thermal oxide layer in a formation of a semiconductor device is disclosed. The A method for growing a thermal oxide layer in a formation of a semiconductor device comprises the steps of: a) performing a first dry oxidation using oxygen gas at a predetermined temperature in a oxidation tube; b) performing a wet oxidation using oxygen/hydrogen gas; c) performing a second oxidation using oxygen gas. Thereby, high pressure of processing tube is kept and the processing time is reduced and a processing temperature is lowered. In addition, the gas amount of nitrogen is automatically controlled, resulting in obtaining a high quality of oxidation. |
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| AbstractList | A method for growing a thermal oxide layer in a formation of a semiconductor device is disclosed. The A method for growing a thermal oxide layer in a formation of a semiconductor device comprises the steps of: a) performing a first dry oxidation using oxygen gas at a predetermined temperature in a oxidation tube; b) performing a wet oxidation using oxygen/hydrogen gas; c) performing a second oxidation using oxygen gas. Thereby, high pressure of processing tube is kept and the processing time is reduced and a processing temperature is lowered. In addition, the gas amount of nitrogen is automatically controlled, resulting in obtaining a high quality of oxidation. |
| Author | BANG, CHOL-WON KIM, CHUN-SOO |
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| DocumentTitleAlternate | 반도체 소자 제조를 위한 열적 산화막 성장 방법 |
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| RelatedCompanies | HYUNDAI ELECTRONICS IND.CO.,LTD |
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| Snippet | A method for growing a thermal oxide layer in a formation of a semiconductor device is disclosed. The A method for growing a thermal oxide layer in a formation... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | OXIDATION METHOD OF SEMICONDUCTOR DEVICE |
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