OXIDATION METHOD OF SEMICONDUCTOR DEVICE

A method for growing a thermal oxide layer in a formation of a semiconductor device is disclosed. The A method for growing a thermal oxide layer in a formation of a semiconductor device comprises the steps of: a) performing a first dry oxidation using oxygen gas at a predetermined temperature in a o...

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Bibliographic Details
Main Authors BANG, CHOL-WON, KIM, CHUN-SOO
Format Patent
LanguageEnglish
Korean
Published 18.01.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for growing a thermal oxide layer in a formation of a semiconductor device is disclosed. The A method for growing a thermal oxide layer in a formation of a semiconductor device comprises the steps of: a) performing a first dry oxidation using oxygen gas at a predetermined temperature in a oxidation tube; b) performing a wet oxidation using oxygen/hydrogen gas; c) performing a second oxidation using oxygen gas. Thereby, high pressure of processing tube is kept and the processing time is reduced and a processing temperature is lowered. In addition, the gas amount of nitrogen is automatically controlled, resulting in obtaining a high quality of oxidation.
Bibliography:Application Number: KR19930010712