METHOD OF MANUFACTURING A MASK ROM

The method improves electrical characteristic of programmed cell of the mask ROM, MOS transistor is formed by implanting impurity ions of second conduction type on a semiconductor substrate of first conduction type through a gate insulation film, forming a gate electrode by selectively etching polys...

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Bibliographic Details
Main Authors CHO, MYUNG - KWAN, LEE, ILL - KWAN, SIN, CHOL - HO
Format Patent
LanguageEnglish
Korean
Published 18.04.1996
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
LAYERED PRODUCTS
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
PERFORMING OPERATIONS
PHYSICS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:The method improves electrical characteristic of programmed cell of the mask ROM, MOS transistor is formed by implanting impurity ions of second conduction type on a semiconductor substrate of first conduction type through a gate insulation film, forming a gate electrode by selectively etching polysilicon and tungsten silicide formed thereon, and diffusing impurity ions of second conduction type so as to form source/drain region. Photoresist covers a part of MOS transistor excepting the selective photoetched MOS transistor, and impurity ions are implanted in the gate insulation film through side wall of the gate electrode of the MOS transistor. An interlayer insulation film covers the resulting structure after removing the photoresist, contact hole is formed in the interlayer insulation film, and formation of protective layer and opening of pad are carried out.
Bibliography:Application Number: KR19920008175